A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT
Nonaka, Kenichi, Horiuchi, Akihiko, Negoro, Yuki, Iwanaga, Kensuke, Yokoyama, Seiichi, Hashimoto, Hideki, Sato, Masashi, Maeyama, Yusuke, Shimizu, Masaaki, Iwakuro, HiroakiVolume:
615-617
Year:
2009
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.615-617.821
File:
PDF, 298 KB
english, 2009