High-Performance Multi-Wafer SiC Epitaxy – First Results of...

Materials Science Forum 2010 / 4 Vol. 645-648

High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor

Hecht, Christian, Stein, René A., Thomas, Bernd, Wehrhahn-Kilian, Larissa, Rosberg, Jonas, Kitahata, Hiroya, Wischmeyer, Frank
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
645-648
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.645-648.89
Date:
April, 2010
File:
PDF, 729 KB
english, 2010
Conversion to is in progress
Conversion to is failed