Nitrogen Doped 300 mm Czochralski Silicon Wafers Optimized...

Materials Science Forum 2012 / 7 Vol. 725

Nitrogen Doped 300 mm Czochralski Silicon Wafers Optimized with Respect to Voids with Laterally Homogeneous Internal Getter Capabilities

Kissinger, Gudrun, Raming, Georg, Wahlich, Reinhold, Müller, Timo
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Volume:
725
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.725.221
Date:
July, 2012
File:
PDF, 401 KB
english, 2012
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