Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using...

Materials Science Forum 2013 / 1 Vol. 740-742

Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy

Sambonsuge, Shota, Saito, Eiji, Jung, Myung Ho, Fukidome, Hirokazu, Filimonov, Sergey, Suemitsu, Maki
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Volume:
740-742
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.740-742.339
Date:
January, 2013
File:
PDF, 484 KB
english, 2013
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