SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices
Chailloux, Thibaut, Calvez, Cyril, Thierry-Jebali, Nicolas, Planson, Dominique, Tournier, DominiqueVolume:
778-780
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.778-780.1122
Date:
February, 2014
File:
PDF, 297 KB
english, 2014