Designing of Quasi-Modulated Region in 4H-SiC Lateral...

Materials Science Forum 2014 / 2 Vol. 778-780

Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs

Nanen, Yuichiro, Suda, Jun, Kimoto, Tsunenobu
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Volume:
778-780
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.778-780.943
Date:
February, 2014
File:
PDF, 1011 KB
english, 2014
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