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High-Temperature 1.3 µm InAs/GaAs Quantum Dot Lasers on Si Substrates Fabricated by Wafer Bonding
Tanabe, Katsuaki, Rae, Timothy, Watanabe, Katsuyuki, Arakawa, YasuhikoVolume:
6
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/apex.6.082703
Date:
August, 2013
File:
PDF, 530 KB
english, 2013