A Novel Sub-20 V Contact Gate Metal Oxide Semiconductor...

A Novel Sub-20 V Contact Gate Metal Oxide Semiconductor Field Effect Transistor with Fully Complementary Metal Oxide Semiconductor Compatible Process

Lee, Te Liang, Tsai, Ming Tsang, King, Ya Chin, Lin, Chrong Jung
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.52.04cc16
Date:
April, 2013
File:
PDF, 599 KB
english, 2013
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