MOVPE growth of GaN on Si substrate with 3C-SiC buffer...

Japanese Journal of Applied Physics 2014 / 05 Vol. 53; Iss. 5S1

MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer

Katagiri, Masayoshi, Fang, Hao, Miyake, Hideto, Hiramatsu, Kazumasa, Oku, Hidehiko, Asamura, Hidetoshi, Kawamura, Keisuke
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Volume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.53.05fl09
Date:
May, 2014
File:
PDF, 1.27 MB
english, 2014
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