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Mechanism of state transition of a defect causing random-telegraph-noise-induced fluctuation in stress-induced leakage current of SiO 2 films
Ishida, Takeshi, Tega, Naoki, Mori, Yuki, Miki, Hiroshi, Mine, Toshiyuki, Kume, Hitoshi, Torii, Kazuyoshi, Yamada, Ren-ichi, Shiraishi, KenjiVolume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.53.08lb01
Date:
August, 2014
File:
PDF, 1.36 MB
english, 2014