Retention characteristics of gate-all-around metal–oxide–nitride–oxide–semiconductor devices for the trap energy level dependence at elevated temperature
Yang, Hyung-Jun, Lee, Gae-Hun, Song, Yun-HeubVolume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.53.104301
Date:
October, 2014
File:
PDF, 2.05 MB
english, 2014