Development of InAs/AlSb HEMTs Using Pre-Passivated...

Development of InAs/AlSb HEMTs Using Pre-Passivated as-Grown Epitaxies

Lin, Heng-Kuang, He, Wei-Zhi, Ho, Han-Chieh
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Volume:
158
Year:
2011
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.3622848
File:
PDF, 1.42 MB
english, 2011
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