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Characterization of very fast states in the vicinity of the conduction band edge at the SiO2/SiC interface by low temperature conductance measurements
Yoshioka, Hironori, Nakamura, Takashi, Kimoto, TsunenobuVolume:
115
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4858435
Date:
January, 2014
File:
PDF, 1.12 MB
english, 2014