Dual Passivation of Intrinsic Defects at the Compound...

Dual Passivation of Intrinsic Defects at the Compound Semiconductor/Oxide Interface Using an Oxidant and a Reductant

Kent, Tyler, Chagarov, Evgeniy, Edmonds, Mary, Droopad, Ravi, Kummel, Andrew C.
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Volume:
9
Language:
english
Journal:
ACS Nano
DOI:
10.1021/nn5063003
Date:
May, 2015
File:
PDF, 6.15 MB
english, 2015
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