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Trap effects studies in GaN MESFETs by pulsed measurements
Trassaert, S., Boudart, B., Gaquière, C., Théron, D., Crosnier, Y., Huet, F., Poisson, M.A.Volume:
35
Year:
1999
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19990887
File:
PDF, 1.53 MB
english, 1999