Effects of source gas molecules on N–H- and N–D-related defect formations in GaAsN grown by chemical beam epitaxy
Ikeda, Kazuma, Ohshita, Yoshio, Tanaka, Tomohiro, Honda, Takahiko, Inagaki, Makoto, Demizu, Koshiro, Kojima, Nobuaki, Suzuki, Hidetoshi, Machida, Hideaki, Sudoh, Hiroshi, Yamaguchi, MasafumiVolume:
54
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.54.041001
Date:
April, 2015
File:
PDF, 694 KB
english, 2015