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The influence of Si-doping to the growth rate and yellow luminescence of GaN grown by MOCVD
Shuti Li, Chunlan Mo, Li Wang, Chuanbing Xiong, Xuexin Peng, Fengyi Jiang, Zhenbo Deng, Dawei GongVolume:
93
Year:
2001
Language:
english
Pages:
6
DOI:
10.1016/s0022-2313(01)00206-x
File:
PDF, 114 KB
english, 2001