SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 7 February 2015)] Gallium Nitride Materials and Devices X - Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology
Chyi, Jen-Inn, Fujioka, Hiroshi, Morkoç, Hadis, Marcon, Denis, Van Hove, Marleen, De Jaeger, Brice, Posthuma, Niels, Wellekens, Dirk, You, Shuzhen, Kang, Xuanwu, Wu, Tian-Li, Willems, Maarten, StoffelVolume:
9363
Year:
2015
Language:
english
DOI:
10.1117/12.2077806
File:
PDF, 1000 KB
english, 2015