Fabrication of Ge Metal–Oxide–Semiconductor Capacitors with...

Japanese Journal of Applied Physics 2011 / 4 Vol. 50; Iss. 4

Fabrication of Ge Metal–Oxide–Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO 2 /GeO 2 Bilayer Passivation and Postmetallization Annealing Effect of Al

Hirayama, Kana, Ueno, Ryuji, Iwamura, Yoshiaki, Yoshino, Keisuke, Wang, Dong, Yang, Haigui, Nakashima, Hiroshi
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Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.50.04DA10
Date:
April, 2011
File:
PDF, 845 KB
english, 2011
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