Lattice damage study of implanted InGaAs by means of Raman...

Journal of Luminescence 2000 Vol. 87-89; Iss. none

Lattice damage study of implanted InGaAs by means of Raman spectroscopy

S Hernández, B Marcos, R Cuscó, N Blanco, G González-Dı́az, L Artús
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Volume:
87-89
Year:
2000
Language:
english
Pages:
3
DOI:
10.1016/s0022-2313(99)00374-9
File:
PDF, 86 KB
english, 2000
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