Optimisation of the dislocation filter layers in 1.3-μm...

IET Optoelectronics 2015 / 04 Vol. 9; Iss. 2

Optimisation of the dislocation filter layers in 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates

Tang, Mingchu, Salamo, Gregory, Liu, Huiyun, Dorogan, Vitaliy G., Jiang, Qi, Seeds, Alwyn J., Wu, Jiang, Chen, Siming, Benamara, Mourad, Mazur, Yuriy
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Volume:
9
Language:
english
Journal:
IET Optoelectronics
DOI:
10.1049/iet-opt.2014.0078
Date:
April, 2015
File:
PDF, 395 KB
english, 2015
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