Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field
Shalygin, V. A., Vorobjev, L. E., Firsov, D. A., Panevin, V. Yu., Sofronov, A. N., Melentyev, G. A., Antonov, A. V., Gavrilenko, V. I., Andrianov, A. V., Zakharyin, A. O., Suihkonen, S., Törma, P. T.Volume:
106
Year:
2009
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3272019
File:
PDF, 586 KB
english, 2009