Illumination effects on electrical characteristics of GaN/AlGaN/GaN heterostructures and heterostructure field effect transistors and their elimination by proper surface passivation
Fagerlind, M., Rorsman, N.Volume:
112
Year:
2012
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4730782
File:
PDF, 1.15 MB
english, 2012