Improved thermal and electrical properties of Al-doped Ge 2 Sb 2 Te 5 films for phase-change random access memory
Wang, Guoxiang, Shen, Xiang, Nie, Qiuhua, Wang, Rongping, Wu, Liangcai, Lv, Yegang, Chen, Fen, Fu, Jing, Dai, Shixun, Li, JunVolume:
45
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/45/37/375302
Date:
September, 2012
File:
PDF, 292 KB
english, 2012