GaN-Based LEDs With Al-Doped ZnO Transparent Conductive...

IEEE Electron Device Letters 2015 / 4 Vol. 36; Iss. 4

GaN-Based LEDs With Al-Doped ZnO Transparent Conductive Layer Grown by Metal Organic Chemical Vapor Deposition: Ultralow Forward Voltage and Highly Uniformity

Yang, Jingchuan, Pei, Yanli, Fan, Bingfeng, Huang, Shanjin, Chen, Zimin, Tong, Cunsheng, Luo, Hongtai, Liang, Jun, Wang, Gang
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Volume:
36
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2015.2404137
Date:
April, 2015
File:
PDF, 1.14 MB
english, 2015
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