[IEEE 2014 14th Non-Volatile Memory Technology Symposium (NVMTS) - Jeju Island, Korea (South) (2014.10.27-2014.10.29)] 2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS) - Effect of nitrogen-doped GST buffer layer on switching characteristics of conductive-bridging RAM
Lim, Seokjae, Lee, Sangheon, Woo, Jiyong, Lee, Daeseok, Park, Jaesung, Song, Jeonghwan, Moon, Kibong, Park, Jaehyuk, Prakash, Amit, Hwang, HyunsangYear:
2014
Language:
english
DOI:
10.1109/nvmts.2014.7060857
File:
PDF, 861 KB
english, 2014