[IEEE 2014 14th Non-Volatile Memory Technology Symposium (NVMTS) - Jeju Island, Korea (South) (2014.10.27-2014.10.29)] 2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS) - Effect of TiOx-based tunnel barrier on non-linearity and switching reliability of resistive random access memory
Lee, Sangheon, Lee, Daeseok, Woo, Jiyong, Cha, Euijun, Song, Jeonghwan, Park, Jaesung, Moon, Kibong, Koo, Yunmo, Lim, Seokjae, Park, Jaehyuk, Prakash, Amit, Hwang, HyunsangYear:
2014
Language:
english
DOI:
10.1109/nvmts.2014.7060861
File:
PDF, 731 KB
english, 2014