Point defects in silicon carbide as a promising basis for...

Physics of the Solid State 2015 / 5 Vol. 57; Iss. 5

Point defects in silicon carbide as a promising basis for spectroscopy of single defects with controllable quantum states at room temperature

Soltamov, V. A., Tolmachev, D. O., Il’in, I. V., Astakhov, G. V., Dyakonov, V. V., Soltamova, A. A., Baranov, P. G.
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Volume:
57
Language:
english
Journal:
Physics of the Solid State
DOI:
10.1134/s1063783415050285
Date:
May, 2015
File:
PDF, 893 KB
english, 2015
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