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Analysis of Device Characteristics for InGaN Semiconductor Lasers
Hatakoshi, Gen-ichi, Onomura, Masaaki, Saito, Shinji, Sasanuma, Katsunobu, Itaya, KazuhikoVolume:
38
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.38.1780
Date:
March, 1999
File:
PDF, 163 KB
english, 1999