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Properties of Ru∕Hf[sub x]Si[sub 1−x]O[sub y]∕Si Metal Oxide Semiconductor Gate Stack Structures Grown by Atomic Vapor Deposition
Fröhlich, K., Lupták, R., Huseková, K., Cico, K., Tapajna, M., Weber, U., Baumann, P. K., Lindner, J., Espinós, J. P.Volume:
153
Year:
2006
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.2209560
File:
PDF, 109 KB
english, 2006