A Very Robust AlGaN/GaN HEMT Technology to High Forward...

Active and Passive Electronic Components 2012 Vol. 2012

A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

Christiansen, Bradley D., Heller, Eric R., Coutu, Ronald A., Vetury, Ramakrishna, Shealy, Jeffrey B.
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Volume:
2012
Year:
2012
Language:
english
Journal:
Active and Passive Electronic Components
DOI:
10.1155/2012/493239
File:
PDF, 807 KB
english, 2012
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