EXAFS and electrical studies of new narrow-gap semiconductors: InTe1−xSex and In1−xGaxTe
A.I. Lebedev, A.V. Michurin, I.A. Sluchinskaya, V.N. Demin, I.H. MunroVolume:
61
Year:
2000
Language:
english
Pages:
6
DOI:
10.1016/s0022-3697(00)00196-7
File:
PDF, 204 KB
english, 2000