Mott-memories Based on the Narrow Gap Mott Insulators AM4Q8...

MRS Proceedings 2013 Vol. 1562

Mott-memories Based on the Narrow Gap Mott Insulators AM4Q8 (A=Ga, Ge ; M = V, Nb, Ta ; Q = S, Se)

Cario, L., Janod, E., Tranchant, J., Stoliar, P., Rozenberg, M., Besland, M.-P., Corraze, B.
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Volume:
1562
Year:
2013
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/opl.2013.581
File:
PDF, 772 KB
english, 2013
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