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In situ Study of Strain Relaxation Mechanisms During Lattice-mismatched InGaAs/GaAs Growth by X-ray Reciprocal Space Mapping
Sasaki, Takuo, Suzuki, Hidetoshi, Sai, Akihisa, Takahasi, Masamitu, Fujikawa, Seiji, Ohshita, Yoshio, Yamaguchi, MasafumiVolume:
1268
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-1268-ee06-02
Date:
January, 2010
File:
PDF, 111 KB
english, 2010