Electrostatic Force Microscopy and Secondary Electron Imaging of Double Stacking Faults in Heavily n-type 4H-SiC after Oxidation
Mikhov, M. K., Skromme, B. J., Wang, R., Li, C., Bhat, I.Volume:
799
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/proc-799-z5.21
Date:
January, 2003
File:
PDF, 297 KB
english, 2003