Vaeancy Type Defects after Post-Growth Quenching and...

Materials Science Forum 1992 Vol. 105-110

Vaeancy Type Defects after Post-Growth Quenching and Re-Annealing of Si GaAs

Clayton, J.M., Fretwell, H.M., Usmar, S.G., Alam, A., Hurle, D.T.J.
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Volume:
105-110
Year:
1992
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.105-110.929
File:
PDF, 303 KB
1992
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