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Study of the Defect Depth Distribution in Heat Treated Si Wafers by X-Ray Topography
Pal, E.K., Hild, Erzsébet, Kormàny, T., Nouredin, S.Volume:
38-41
Year:
1989
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.38-41.1313
File:
PDF, 481 KB
1989