Impact of inserted Ta ultrathin layer and postdeposition...

Japanese Journal of Applied Physics 2015 / 04 Vol. 54; Iss. 4S

Impact of inserted Ta ultrathin layer and postdeposition annealing on the forming voltage of Ir/Ti/Ta/HfO 2 /TiN/Ti/SiO 2 /Si resistive switching devices

Asanuma, Shutaro, Shima, Hisashi, Yamazaki, Masashi, Hayama, Kazumi, Hata, Nobuhiro, Akinaga, Hiroyuki
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Volume:
54
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.54.04dd10
Date:
April, 2015
File:
PDF, 681 KB
english, 2015
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