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[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - Advanced Metal Gate Electrode Options Compatible with ALD and AVD® HfSiOx-Based Gate Dielectrics
Karim, Zia, Biossiere, Olivier, Lohe, Christoph, Zhang, Zhihong, Park, Woong, Manke, Christian, Baumann, Peter K., Dalton, Jeremie, Ramanathan, Sasangan, Lindner, Johannes, Seidel, Tom, Lehnen, PeerVolume:
3
Year:
2006
Language:
english
DOI:
10.1149/1.2355727
File:
PDF, 402 KB
english, 2006