The influence of strong electric field on the interface in the Al–SiO2-n-Si Auger transistor
A.A. Rogachev, V.D. Kalganov, N.V. Mileshkina, E.V. OstroumovaVolume:
31
Year:
2000
Language:
english
Pages:
7
DOI:
10.1016/s0026-2692(00)00096-3
File:
PDF, 200 KB
english, 2000