Estimation of drift mobility in InGaAsP semiconducting...

Estimation of drift mobility in InGaAsP semiconducting alloys from photoluminescence at 77 and 300 K

A. Iribarren, J.Fuentes Betancourt
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Volume:
35
Year:
2004
Language:
english
Pages:
3
DOI:
10.1016/s0026-2692(03)00219-2
File:
PDF, 86 KB
english, 2004
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