Inversion electron mobility in Si−SiO2 structures oxidized...

Microelectronics Journal 1986 Vol. 17; Iss. 5

Inversion electron mobility in Si−SiO2 structures oxidized at low and high temperatures

J. Kassabov, D. Dimitrov, J. Koprinarova
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
17
Year:
1986
Language:
english
Pages:
8
DOI:
10.1016/s0026-2692(86)80132-x
File:
PDF, 624 KB
english, 1986
Conversion to is in progress
Conversion to is failed