Relation between the leakage currents and the defects created in the oxide and at the interface in a short channel NMOS transistor
A. Bouhdada, S. Bakkali, A. Nouaçry, A. TouhamiVolume:
28
Year:
1997
Language:
english
Pages:
7
DOI:
10.1016/s0026-2692(96)00046-8
File:
PDF, 478 KB
english, 1997