Accurate two-dimensional modelling of the titanium silicide process with an application to a thin base n-p-n bipolar transistor
P. Fornara, S. Denorme, E. de Berranger, D. Mathiot, M. Mouis, A. PoncetVolume:
29
Year:
1998
Language:
english
Pages:
11
DOI:
10.1016/s0026-2692(97)00019-0
File:
PDF, 730 KB
english, 1998