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Reliability of AIGaN/GaN HFETs comprising refractory ohmic and Schottky contacts
J. Würfl, J. Hilsenbeck, E. Nebauer, G. Tränkle, H. Obloh, W. ÖsterleVolume:
40
Year:
2000
Language:
english
Pages:
5
DOI:
10.1016/s0026-2714(00)00128-1
File:
PDF, 432 KB
english, 2000