Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation
J Kuchenbecker, M Borgarino, A Coustou, R Plana, J Graffeuil, F FantiniVolume:
40
Year:
2000
Language:
english
Pages:
6
DOI:
10.1016/s0026-2714(00)00175-x
File:
PDF, 463 KB
english, 2000