Monte Carlo simulation of electronic characteristics in...

Microelectronics Reliability 2001 Vol. 41; Iss. 1

Monte Carlo simulation of electronic characteristics in short channel δ-doped AlInAs/GaInAs HEMTs

Javier Mateos, Tomás González, Daniel Pardo, Virginie Hoel, Alain Cappy
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Volume:
41
Year:
2001
Language:
english
Pages:
5
DOI:
10.1016/s0026-2714(00)00211-0
File:
PDF, 326 KB
english, 2001
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