Inversion phenomenon as a result of junction damages in...

Microelectronics Reliability 2001 Vol. 41; Iss. 1

Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors

G Golan, E Rabinovich, A Inberg, A Axelevitch, G Lubarsky, P.G Rancoita, M Demarchi, A Seidman, N Croitoru
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Volume:
41
Year:
2001
Language:
english
Pages:
6
DOI:
10.1016/s0026-2714(00)00212-2
File:
PDF, 318 KB
english, 2001
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