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Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors
Martin Sandén, B Gunnar Malm, Jan V Grahn, Mikael ÖstlingVolume:
41
Year:
2001
Language:
english
Pages:
6
DOI:
10.1016/s0026-2714(01)00016-6
File:
PDF, 561 KB
english, 2001