Optimization of WSi2 by SiH4 CVD: impact on oxide quality

Microelectronics Reliability 2001 Vol. 41; Iss. 7

Optimization of WSi2 by SiH4 CVD: impact on oxide quality

D. Brazzelli, G. Ghidini, C. Riva
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Volume:
41
Year:
2001
Language:
english
Pages:
4
DOI:
10.1016/s0026-2714(01)00057-9
File:
PDF, 134 KB
english, 2001
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